| Title: | Process Variation: Challenges & opportunities |
| Date: |
November 12, 2007 (Monday)
|
| Time: |
10:30 a.m. - 11:30 a.m.
|
| Venue: |
Room 1027, 10/F, Ho Sin-hang Engineering Building,
The Chinese University of Hong Kong, Shatin, N.T. |
| Speaker: |
Mr. T. M. Mak
Senior Research Scientist Intel Corporation |
As we scale semiconductor device to nanometer dimensions, we have to confront many issues arised with the reality of physics. Increasingly, we will have more difficulty controlling the dimensions of the devices and wires that we want to fabricate. As minute as these variations are, we are also confronted with the large number of devices in our chips over a billion and keep doubling every generation. We will have an overview of all these undesirable mechanisms in play. These also invalidate a lot of test assumptions and render our traditional test methodologies not applicable. It seems like a disaster in the making. However, to quote a Chinese idiom, "whenever there is a danger, it also presents an opportunity". What are the opportunities presented by this scenario of highly variable process? We will try to show some of these possibilities. And hopefully, you can further explore and exploit them as well.
BIOGRAPHY:
TM Mak is a senior research scientist and an engineering manager working in the area of manufacturing test R&D with Intel Corp. He has been there for over 23 years and has worked in product development, test engineering, design automation and design for test. Has also spent 5 years mentoring researches conducted at the GSRC (Gigascale System Research Center). He twice received the Outstanding Industrial Mentor Award from SRC (Semiconductor Research Corp). He has received the Best Paper Award from ITC2004 and a Best Panel Award from VTS2004. He received 11 patents with 3 more pending. His research Interest includes defect modeling as a result of nanometer processing, high speed IO testing, Fault tolerant and On-line testing. He graduated from HK Polytechnics with a BSEE.
For more information, please refer to http://www.cse.cuhk.edu.hk/seminar